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  this is information on a product in full production. march 2014 docid026136 rev 1 1/16 STD10NF30 automotive-grade n-channel 300 v, 10 a, 0.28 typ., mesh overlay? power mosfet in a dpak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? gate charge minimized ? very low intrinsic capacitances applications ? switching applications description this power mosfet is designed using the company?s consolidated strip layout-based mesh overlay? process. the result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. dpak 1 3 tab $0y ' 7$% *  6  order code v ds r ds(on)max. i d STD10NF30 300 v 0.33 10 a table 1. device summary order code marking packages packaging STD10NF30 10nf30 dpak tape and reel www.st.com
contents STD10NF30 2/16 docid026136 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid026136 rev 1 3/16 STD10NF30 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 300 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 10 a i d drain current (continuous) at t c = 100 c 6.3 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 103 w dv/dt (2) 2. i sd 10 a, di/dt 200 a/ s, v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns t stg storage temperature - 55 to 175 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.45 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 50 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 175 mj
electrical characteristics STD10NF30 4/16 docid026136 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 300 v i dss zero gate voltage drain current (v gs = 0) v ds = 300 v 1 a v ds = 300 v, t c =125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5 a 0.28 0.33 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 -780-pf c oss output capacitance - 110 - pf c rss reverse transfer capacitance -15-pf q g total gate charge v dd = 240 v, i d = 10 a, v gs = 10 v (see figure 14 ) -23-nc q gs gate-source charge - 3.5 - nc q gd gate-drain charge - 11.3 - nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 150 v, i d = 5 a, r g = 4.7 , v gs = 10 v (see figure 13 ) -13.5-ns t r rise time - 9.5 - ns t d(off) turn-off-delay time - 32 - ns t f fall time - 9.5 - ns
docid026136 rev 1 5/16 STD10NF30 electrical characteristics 16 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 10 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 40 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 10 a, di/dt = 100 a/ s v dd = 60 v (see figure 18 ) - 145 ns q rr reverse recovery charge - 0.76 c i rrm reverse recovery current - 10.3 a t rr reverse recovery time i sd = 10 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 18 ) - 174 ns q rr reverse recovery charge - 1.08 c i rrm reverse recovery current - 12.5 a
electrical characteristics STD10NF30 6/16 docid026136 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.1 tj=175c tc=25c single pulse 100 10ms am18166v1 , '       9 '6 9  $  9 9 9 *6 9   9 9  $0y , '     9 *6 9  $     9 '6 9 $0y 9 *6      4 j q& 9     9 '' 9 , ' $        9 '6 9 9 '6 $0y 5 '6 rq     , ' $    9 *6 9   $0y
docid026136 rev 1 7/16 STD10NF30 electrical characteristics 16 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics &       9 '6 9 s)   &lvv &rvv &uvv $0y 9 *6 wk      7 - ?& qrup      , ' ?$  $0y 5 '6 rq    7 - ?& qrup         , ' $ 9 *6 9 $0y 9 %5 '66  7 - ?& qrup          , ' p$ $0y 9 6' , 6' $ 9       7 - ?& 7 - ?& 7 - ?&     $0y
test circuits STD10NF30 8/16 docid026136 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026136 rev 1 9/16 STD10NF30 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STD10NF30 10/16 docid026136 rev 1 figure 19. dpak (to-252) drawing 0068772_k_type_a
docid026136 rev 1 11/16 STD10NF30 package mechanical data 16 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STD10NF30 12/16 docid026136 rev 1 figure 20. dpak footprint (a) a. all dimensions are in millimeters. footprint_rev_k
docid026136 rev 1 13/16 STD10NF30 packaging mechanical data 16 5 packaging mechanical data figure 21. tape for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data STD10NF30 14/16 docid026136 rev 1 figure 22. reel for dpak (to-252) table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid026136 rev 1 15/16 STD10NF30 revision history 16 6 revision history table 11. document revision history date revision changes 27-mar-2014 1 initial release.
STD10NF30 16/16 docid026136 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com


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