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this is information on a product in full production. march 2014 docid026136 rev 1 1/16 STD10NF30 automotive-grade n-channel 300 v, 10 a, 0.28 typ., mesh overlay? power mosfet in a dpak package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? gate charge minimized ? very low intrinsic capacitances applications ? switching applications description this power mosfet is designed using the company?s consolidated strip layout-based mesh overlay? process. the result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. dpak 1 3 tab $ 0 y ' 7 $ % * 6 order code v ds r ds(on)max. i d STD10NF30 300 v 0.33 10 a table 1. device summary order code marking packages packaging STD10NF30 10nf30 dpak tape and reel www.st.com
contents STD10NF30 2/16 docid026136 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 docid026136 rev 1 3/16 STD10NF30 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 300 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 10 a i d drain current (continuous) at t c = 100 c 6.3 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 40 a p tot total dissipation at t c = 25 c 103 w dv/dt (2) 2. i sd 10 a, di/dt 200 a/ s, v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns t stg storage temperature - 55 to 175 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.45 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 50 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 175 mj electrical characteristics STD10NF30 4/16 docid026136 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified). table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 300 v i dss zero gate voltage drain current (v gs = 0) v ds = 300 v 1 a v ds = 300 v, t c =125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5 a 0.28 0.33 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 -780-pf c oss output capacitance - 110 - pf c rss reverse transfer capacitance -15-pf q g total gate charge v dd = 240 v, i d = 10 a, v gs = 10 v (see figure 14 ) -23-nc q gs gate-source charge - 3.5 - nc q gd gate-drain charge - 11.3 - nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 150 v, i d = 5 a, r g = 4.7 , v gs = 10 v (see figure 13 ) -13.5-ns t r rise time - 9.5 - ns t d(off) turn-off-delay time - 32 - ns t f fall time - 9.5 - ns docid026136 rev 1 5/16 STD10NF30 electrical characteristics 16 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 10 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 40 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 10 a, di/dt = 100 a/ s v dd = 60 v (see figure 18 ) - 145 ns q rr reverse recovery charge - 0.76 c i rrm reverse recovery current - 10.3 a t rr reverse recovery time i sd = 10 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 18 ) - 174 ns q rr reverse recovery charge - 1.08 c i rrm reverse recovery current - 12.5 a electrical characteristics STD10NF30 6/16 docid026136 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.1 tj=175c tc=25c single pulse 100 10ms am18166v1 , ' 9 ' 6 9 $ 9 9 9 * 6 9 9 9 $ 0 y , ' 9 * 6 9 $ 9 ' 6 9 $ 0 y 9 * 6 4 j q & |